Cezhou Zhao



Qualifications

Ph.D.   Xi'an Jiaotong University,  1995


Experience

Professor, Xi'an Jiaotong-Liverpool University (September, 2012 - Present), Suzhou, China-PRC.

Dr. Ce Zhou Zhao joined Xi’an Jiaotong-Liverpool University in Sep. 2008. He is a professor at Xi'an Jiaotong- Liverpool University and a PhD supervisor at both University of Liverpool (UK) and Xi'an Jiaotong University (China). He was a research associate/fellow at Liverpool University/Liverpool John Moores University, UK, from July 1998 to Sep. 2008. He became a professor in Dec. 1997 and was an associate professor in Nov. 1994 with Xidian University, Xi’an, China.

Prof. Zhao has authored or coauthored more than 120 publications, including 3 Chinese books and 90 journal papers. He also is the author or coauthor of a number of patents. He is a member of the Technical Program Steering Committee in IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) in 2009 and the tutorial chairman in IPFA in 2013.


Research Interests

  • Deposit and Characterization of High-k Materials
  • Reliability and Degradation of MOS devices and ICs
  • Radiation Hardness of MOS Devices and ICs
  • Semiconductor Integrated Optics & Waveguided Devices.
  • VLSI Design
  • Solar Cell Technology


Publications

Books 

Zhao, C., Fang, Z., & Lu, Q. (2014).  An Introduction of Microelectronics (English) China Science Publishing (www.seiencep.com).  


Zhao, C. (1998).  Semiconductor Guided-Wave Optical Devices: Theory and Technology (Chinese) Publishing House of Defense Industry.  


Zhao, C. & Gao, Y. (1997).  Semiconductor Material Based on Silicon and Semiconductor Optical Waveguide (Chinese) Publishing House of Electronic Industry.  


Zhuang, Y., Zhang, D. S., Jia, X. Z., Tan, H. Q., & Zhao, C. (1996).  Application Reliability Technology of Microelectronic Devices (Chinese) Publishing House of Electronic Industry.  


Refereed Articles and Proceedings 

Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Peter King (2013).  Grain Size Dependence of Dielectric Relaxation in Cerium Oxide as High-k Layer.   Nanoscale Research Letters, 8 (4), 172.


Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., & Chalker, P. R. (2013).  Dielectric relaxation of high-k oxides.   Nanoscale Research Letters, 8 (11), 456.


Chen, Q., Wu, J. J., Fang, Z., & Zhao, C. Z. (2013).  The design and simulation of p-type Si/SiGe Terahertz quantum cascade lasers.   Optics & Laser Technology, 57, 104.


Fang, Z., Chen, Q., & Zhao, C. Z. (2013).  A review of recent progress in lasers on silicon.   Optics & Laser Technology, 46, 103-110.


Zhao, C., Zhao, C. Z., & Da, B. (2012).  A Novel Technique for Arthmetric Elements Standard Cell Library Establishment Based on Tanner Tools.   Advanced Materials Research, 569, 273.


Wu, J. J., Wu, H., & Zhao, C. Z. (2012).  Low Cost Anti-Reflection Coating for Photovoltaic Application.   Advanced Materials Research, 538-541, 414.


Wu, J. J., Wu, H., & Zhao, C. Z. (2012).  CdTe solar cells on flexible metallic substrates.   Advanced Materials Research, 535-537, 2071-2078.


Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., & Chalker, P. R. (2012).  Advanced CMOS Gate Stack: Present Research Progress.   ISRN Nanotechnology, 2012, 689023.


Zhao, C., Zhao, C. Z., Tao, J., Werner, M., Taylor, S., and Chalker, P. R. (2012).  Dielectric Relaxation of Lanthanide-based Ternary Oxides: Physical and Mathematical Models.   Journal of Nanomaterials, 2012, 241470.


Fang, Z. & Zhao, C. Z. (2012).  Recent Progress in Silicon Photonics: A Review.   ISRN Optics, 2012, 428690.


Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., J. M. Gaskell, H. C. Aspinall, A. C. Jones, and Susu Chen (2012).  Thermal Stability of Neodymium Aluminates high-? dielectric deposited by Liquid Injection MOCVD using single source Heterometallic Alkoxide precursors.   Journal of Nanomaterials, 2012, 891079.


Hu, X., Zhao, C. Z., & Gui, J. (2012).  Ionizing Radiation Testing System for Emerging Semiconductor Materials and Devices.   Applied Mechanics and Materials, 120, 495.


Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Jones, A. C., Chun Zhao (2011).  Dielectric relaxation of La-doped zirconia caused by annealing ambient.   Nanoscale Research Letters, 6 (1), 48.


Fang, Z., Wang, X. C., Wu, H. C., & Zhao, C. Z. (2011).  Achievements and Challenges of CdTe Solar Cells.   International Journal of Photoenergy, 2011, 297350.


Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., A. C. Jones (2009).  Frequency dispersion and dielectric relaxation of La2Hf2O7.   Journal of Vacuum Science & Technology, B27 (1), 333-337.


Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., J. M. Gaskell and A. C. Jones (2009).  High-k materials and their response to gamma ray radiation.   Journal of Vacuum Science & Technology, B27 (1), 411-415.


Alexandrou, I., Lioudakis, E., Delaportas, D., Zhao, C. Z., & Othonos, A. (2009).  Monitoring Charge Exchange in P3HT-Nanotube Composites Using Optical and Electrical Characterisation.   Nanoscale Research Letters, 4 (7), 635-639.


Alexandrou, I., Lioudakis, E., Delaportas, D., Zhao, C. Z., & Othonos, A. (2009).  Optoelectronic properties of P3HT-nanotube composites.   OAtube Nanotechnology, 2, 108.


Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., A. C. Jones (2009).  Dielectric relaxation of lanthanum doped zirconium oxide.   Journal of Applied Physics, 105, 044102.


Chang, M. H., Zhao, C. Z., Ji, Z. G., Zhang, J. F., Groeseneken, G., Pantisano, L., Gendt, S. D., and Heyns, M. M., (2009).  On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks.   Journal of Applied Physics, 105, 054505.


Chalker, P. R., Werner, M., Romani, S., Potter, R. J., Black, K., Aspinall, H. C., Jones, A. C., Zhao, C. Z., Taylor, S., and Heys, P. N. (2008).  Permittivity enhancement of hafnium dioxide high-k films by cerium doping.   Applied Physics Letters, 93, 182911.


Zhang, J. F., Zhang, C. Z., Chang, M. H., Zahid, M. B., Groeseneken, G., G. Degraeveken R. Degraeve Gendt De (2008).  Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks.   Applied Physics Letters, 92, 013501.


Black, K., Aspinall, Helen C., Jones, Anthony C., Przybylak, K., Bacsa, J., Chalker, P. R., Taylor, S., Zhao, C. Z., Elliott, S. D., Zydor, A., and Heys, P. N., (2008).  Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors.   Journal of Materials Chemistry, 81 (38), 4561-4571.


Zhao, C. Z., Zhang, J. F., Chang, M. H., Peaker, A. R., Hall, S., G. Groeseneken L. Pantisano S. De Gendt M. Heyns (2008).  Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect.   IEEE Transaction Electron Devices, 55 (7), 1647-1656.


Zhao, C. Z., Zhang, J., Zahid, M., Groeseneken, G., Degraeve, R., S De Gendt (2008).  Process-induced positive charges in Hf-based gate stacks.   Journal of Applied Physics, 103, 014507.


Zhao, C. Z., Zahid, M. B., Zhang, J. F., Groeseneken, G., Degraeve, R., S. Gendt De (2007).  Threshold voltage instabiity of p-channel metal-oxide-semiconductor filed effect transistors with hafnium based dielectrics.   Applied Physics Letters, 90, 143502.


Zhao, C. Z., Zhang, J. F., Zahid, M. B., Groeseneken, G., Degraeve, R., S. De Gendt (2007).  Hydrogen induced positive charge in Hf-based dielectrics.   Microelectronic Engineering, 84, 2354.


Zhao, C. Z., Zhang, J. F., Zahid, M. B., Groeseneken, G., Degraeve, R., S. De Gendt (2006).  Impact of gate materials on positive charge formation in HfO2/SiO2 stacks.   Applied Physics Letters, 89 (2), 023507.


Zhang, W. D., Zhang, J. F., Zhao, C. Z., Chang, M. F., Groeseneken, G., Degraeve, R. (2006).  Electrical signature of the defect associated with gate oxide breakdown.   IEEE Electron Device Letters, 27 (5), 393-395.


Zhang, J. F., Zhao, C. Z., Zahid, M. B., Groeseneken, G., Degraeve, R., De Gendt (2006).  An assessment of the location of as-grown electron traps in HfO2/SiO2 stacks.   IEEE Electron Device Letters, 27 (10), 817-820.


Zhao, C. Z., Zhang, J. F., Zahid, M. B., Groeseneken, G., Degraeve, R., S. De Gendt (2006).  Determination of capture cross sections for as-grown electron traps in HfO2/SiO2 stacks.   Journal of Applied Physics, 100 (9), 093716.


Zhao, C. Z. & Zhang, J. F. (2005).  Effects of hydrogen on positive charges in gate oxides.   Journal of Applied Physics, 97 (7), 071703.


Zhao, C. Z., Zhang, J. F., Zahid, M. B., Groeseneken, G., Degraeve, R., S. De Gendt (2005).  Properties and dynamic behaviour of electron traps in HfO2/SiO2 stacks.   Microelectronic Engineering, 80, 366-369.


Zhang, J. F., Zhao, C. Z., Chen, A. H., Groeseneken, G., & Degraeve, R. (2004).  Hole traps in silicon dioxides – Part I: Properties.   IEEE Transaction Electron Devices, 51 (8), 1267-1273.


Zhao, C. Z., Zhang, J. F., Groeseneken, G., & Degraeve, R. (2004).  Hole traps in silicon dioxides – Part II: Generation mechanism.   IEEE Transaction Electron Devices, 51 (8), 1274-1280.


Zhang, J. F., Sii, H. K., Chen, A. H., Zhao, C. Z., Uren, M. J., G. Groeseneken, R. Degraeve (2004).  Hole trap generation in gate dielectric during substrate hole injection.   Semiconductor Science and Technology, 19 (1), L1-L3.


Zhang, J. F, Zhao, C. Z., Groeseneken, G., & Degraeve, R. (2003).  Analysis of the kinetics for interface state generation following hole injection.   Journal of Applied Physics, 93 (10), 6107-6116.


Zhang, J. F., Zhao, C. Z., Sii, H. K., Groeseneken, G., Degraeve, R., J. N. Ellis C. D. Beech (2002).  Relation between hole traps and hydrogenous species in silicon dioxides.   Solid-State Electronics, 46 (11), 1839-1847.


Zhang, J. F., Zhao, C. Z., Groeseneken, G., Degraeve, R., Ellis, J. N., C. D. Beech (2001).  Hydrogen induced positive charge generation in gate oxides.   Journal of Applied Physics, 90 (4), 1911-1919.


Zhao, C. Z., Zhang, J. F., Groeseneken, G., Degraeve, R., Ellis, J. N., C. D. Beech (2001).  Interface state generation after hole injection.   Journal of Applied Physics, 90 (1), 328-336.


Zhang, J. F., Zhao, C. Z., Groeseneken, G., Degraeve, R., Ellis, J. N., C. D. Beech (2001).  Relation between hole traps and non-reactive hydrogen-induced positive charges.   Microelectronic Engineering, 59 (1-4), 67-72.


Zhao, C. Z., Zhang, J. F., Groeseneken, G., Degraeve, R., Ellis, J. N., C. D. Beech (2001).  Generation of mobile hydrogenous ions in gate oxide and their potential applications.   Electronics Letters, 37 (11), 716-717.


Zhao, C. Z., Chen, A. H., Liu, E. K., & Li, G. Z. (1997).  Silicon-on-insulator asymmetric optical switch based on total internal reflection.   IEEE Photonics Technology Letters, 9 (8), 1113-1115.


Zhao, C. Z., Liu, E. K., Li, G. Z., Li, N., & Guo, L. (1997).  Silicon raised strip waveguides based on silicon and silicon dioxide thermal bonding.   IEEE Photonics Technology Letters, 9 (4), 473-474.


Zhao, C. Z., Chen, A. H., Liu, E. K., & Li, G. Z. (1997).  Silicon-on-Insulator 1X2 Y-junction optical switch based on waveguide-vanishing Effect.   Semiconductor Photonics and Technology (English), 3 (2), 140.


Zhao, C. Z., Liu, E. K., Li, G. Z., Liu, Y. L., & Guo, L. (1997).  Silicon-on-insulator 1*2 Y-junction optical switch based on waveguide-vanishing effect.   High Technology Letters (English), 3 (1), 10.


Zhao, C. Z., Liu, E. K., Li, G. Z., Guo, Y., & Liu, X. D. (1997).  Finite element analysis of the SOI structure Mach-Zehnder interferometer modulator (Chinese).   Journal of Electronics & Information Technology, 19 (1), 141.


Zhao, C. Z. (1997).  All-silicon integrated optics: theory and technology (12).   Semiconductor optoelectronics, 18 (1), 66.


Zhao, C. Z., Chen, A. H., Liu, E. K., & Li, G. Z. (1997).  Double-injection bifurcation optical active switch integrated on silicon-on-insulator for 1.3 ?m operation.   Chinese Physics Letters, 14 (3), 183-186.


Zhao, C. Z., Liu, E. K., Li, G. Z., Liu, Y. L., & Guo, L. (1997).  Silicon-on-insulator 2x2 symmetric optical switch based on total internal reflection.   Chinese Physics Letters, 14 (2), 106-108.


Zhao, C. Z., Zhang, D. S, & Shi, B. H. (1996).  Hot carrier effect-model, mechanism and effects on C-V and I-V characteristics in MOS structures.   Microelectronics Reliability, 36 (4), 493.


Zhao, C. Z., Zhang, D. S, & Shi, B. H. (1996).  The tow-dimensional model for the base surface current in integrated bipolar transistors and its applications.   Microelectronics Reliability, 36 (2), 261.


Li, G. Z., Zhao, C. Z., Zheng, Y. X., & Liu, E. K. (1996).  Study and manufacture of optical waveguides in BESOI structures (Chinese).   Acta Photonica Sinica, 25 (3), 252.


Zhao, C. Z. & Liu, E. K. (1996).  Mode characteristics of rib multiple quantum well waveguides with trapezoidal cross-section (Chinese).   Acta Photonica Sinica, 25 (1), 46.


Zhao, C. Z., Liu, E. K., Li, G. Z., Gao, Y., & Guo, C. S. (1996).  Zero-gap directional coupler switch integrated into a silicon-on insulator for 1.3-?m operation.   Optics Letters, 21 (20), 1664-1666.


Zhao, C. Z. (1996).  All-silicon integrated optics: theory and technology (11) (Chinese).   Semiconductor optoelectronics, 17 (4), 380.


Zhao, C. Z., Liu, Y. L., Li, G. Z., Liu, E. K., & Gao, Y. (1996).  Investigation of silicon elctro-optical waveguide intensity modulator at 1.3~1.6?m (Chinese).   Chinese Journal of Semiconductor, 17 (4), 279.


Zhao, C. Z. & Gao, Y. (1996).  All-silicon integrated optics: theory and technology (10) (Chinses).   Semiconductor optoelectonics, 17 (3).


Zhao, C. Z., Liu, E. K., Li, G. Z., & Liu, Z. M. (1996).  Design of a new BOA electro-optic switch used for optical communication (Chinese).   Journal of China Institute of Communications, 17 (3), 119.


Zhao, C. Z. & Liu, Y. L. (1996).  All-silicon integrated optics: theory and technology (9) (Chinses).   Semiconductor optoelectronics, 17 (2), 173.


Zhao, C. Z. (1996).  All- silicon integrated optics: theory and technology (8) (Chinses).   Semiconductor optoelectronics, 17 (1), 80.


Zhao, C. Z., Zhu, Z. Y., Li, Y. J., Liu, E. K., Li, G. Z., X. D. Liu (1996).  Investigation of Si based GaAs/GaAlAs planar optical waveguide (Chinese).   Journal of infrared and millimeter waves, 15 (3), 221.


Gao, Y., Li, G. Z., Liu, E. K., Zhao, C. Z., Liu, X. D., Zhang, X. J., Lu, X. K. (1996).  Development of SiGe/Si directional coupler (Chinese).   Journal of infrared and millimeter waves, 15 (1), 33.


Zhao, C. Z., Liu, E. K., Li, G. Z., & Guo, L. (1996).  Silicon-on-insulator optical intensity modulator based on waveguide-vanishing effect.   Electronics Letters (18), 1667-1668.


Zhao, C. Z., Li, G. Z., Liu, E. K., Gao, Y., & Liu, X. D. (1995).  Silicon-on-insulator Mach-Zehnder wave-guide interferometers operating at 1.3 ?m.   Applied Physics Letters, 67 (17), 2448-2449.


Zhao, C. Z. & Liu, E. K. (1995).  Mode characteristics of rib multiple quantum well waveguides with rectangular cross-section (Chinese).   Acta Photonica Sinica, 24 (5), 437.


Zhao, C. Z., Liu, E. K., & Gao, Y. (1995).  Modeling analysis and structure design of GeSi/Si heterojunction rib BOA switch with large cross-section (Chinese).   Chinese Journal of Semiconductor, 16 (9), 663.


Zhao, C. Z. (1995).  All-silicon integrated optics: theory and technology (7).   Semiconductor optoelectronics, 16 (4), 370.


Zhao, C. Z. (1995).  All-silicon integrated optics: theory and technology (6) (Chinses).   Semiconductor optoelectronics, 16 (3), 284.


Zhao, C. Z., Li, G. Z., Liu, E. K., Liu, X. D., & Gao, Y. (1995).  Fabrication of SOI directional coupler (Chinese).   Chinese Journal of Semiconductor, 16 (12), 928.


Zhao, C. Z. (1995).  All-silicon integrated optics: theory and technology (5) (Chinses).   Semiconductor optoelectronics, 16 (1), 86.


Zhao, C. Z., Liu, E. K., & Li, G. Z. (1995).  Modeling analysis of the GeSi/Si heterojunction zero-gap directional coupler switch (Chinese).   Acta Optica Sinica, 15 (2), 243.


Zhao, C. Z., Li, G. Z., Liu, Y. L., Liu, E. K., & Liu, X. D. (1995).  Modeling study of SOI optical waveguide switch based on total internal reflection (Chinese).   Acta Optica Sinica, 15 (12), 1702.


Zhao, C. Z., Li, G. Z., Liu, E. K., Liu, X. D., & Gao, Y. (1995).  Fabrication of SOI wavelength demultiplexer (Chinese).   Acta Optica Sinica, 15 (11), 1598.


Zhao, C. Z., Li, G. Z., Liu, E. K., & Liu, X. D. (1995).  Modeling analysis of asymmetric SOI optical waveguide switch based on total internal reflection (Chinese).   Journal of infrared and millimeter waves, 14 (6), 435.


Zhao, C. Z., Li, G. Z., Liu, E. K., Liu, X. D., & Gao, Y. (1995).  The zero-gap directional coupler integrated on SOI for 1.3um operation.   High Technology Letters (English), 1 (2), 91.


Zhao, C. Z., Hu, G. Y., Zhang, D. S., & Gu, Y. (1994).  Detection and analysis of pinholes in SiO2 films (Chinese).   Microelectronics, 24 (6), 59.


Zhao, C. Z., Zhang, D. S., & Shi, B. H. (1994).  On the failure mechanism in VLSI (Chinese).   Microelectronics, 24 (4), 60.


Zhao, C. Z., Zhang, D. S., & Shi, B. H. (1994).  Model for the base surface current in epitaxial bipolar transistors and its applications.   Journal of Xidian University, 21 (5), 68.


Zhao, C. Z. (1994).  All-silicon integrated optics: theory and technology (4) (Chinese).   Semiconductor optoelectronics, 15 (4), 391.


Zhao, C. Z. (1994).  All-silicon integrated optics: theory and technology (3) (Chinses).   Semiconductor optoelectonics, 15 (3), 290.


Li, G. Z., Li, D. Q., & Zhao, C. Z. (1994).  All-silicon integrated optics: theory and technology (2) (Chinese).   Semiconductor optoelectonics, 15 (2), 178.


Zhao, C. Z. (1994).  All-silicon integrated optics: theory and technology (1) (Chinese).   Semiconductor optoelectronics, 15 (1), 85.


Zhao, C. Z., Liu, E. K., & Li, G. Z. (1994).  Fabrication of SOI single-mode rib waveguide with large trapezoidal cross-section (Chinese).   Acta Optica Sinica, 14 (7), 783.


Zhao, C. Z., Dong, J .R., Zhang, D. S., & Shi, B. H. (1994).  Effects of hot carrier injection on C-V and I-V characteristics in MOS structures (Chinese).   Research & Progress of Solid State Electronics, 14 (2), 142.


Zhao, C. Z. & Liu, E. K. (1994).  Modeling analysis and structure design of SOI zero-gap directional coupler switch (Chinese).   Acta Optica Sinica, 14 (12), 1324.


Zhao, C. Z., Li, G. Z., & Liu, E. K. (1994).  Fabrication of X type crossing waveguide structure constructed by large single-mode rib SOI waveguide (Chinese).   Acta Optica Sinica, 14 (11), 1230.


Zhao, C. Z., Liu, E. K., Zheng, Y. X., Yang, F. L., Li, D. Q., Z. M. Liu (1994).  Fabrication of all-silicon ridge waveguide with rectangular cross-section and its loss analysis (Chinese).   Acta Optica Sinica, 14 (10), 1054.


Zhao, C. Z., Zhang, D. S., & Shi, B. H. (1993).  The two dimensional model for the base surface potential in integrated bipolar transistors and its applications (Chinese).   Microelectronics, 23 (4), 43.


Zhao, C. Z. (2013).  (Invited) Radiation response of high-k oxides based on an on-site and real-time measurement.   3rd International Conference on the Advancement of Materials and Nanotechnology, Malaysia (Penang).


Zhao, C. Z., Zhao, C., Taylor, S., & Chalker, P. R. (2013).  (Invited) Crystal Grain and Dielectric Relaxation of High-k Thin Film Deposited by ALD and MOCVD.   5th International Conference on Energy Materials Nanotechnology EAST (EMN EAST), China (Beijing).


Mu, Y. F., Zhao, C. Z., Su, S., Zhao, Y., Mitrovic, I., Stephen Taylor Paul Chalker (2013).  Radiation response analyzer of semiconductor dies.   IEEE 20th International Symposium on the Physical and Failure Analysis of Integrated Circuits 2013, China (Suzhou).


Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., Chalker, Paul R., Peter King (2013).  Impact of Cerium Oxide's Grain Size for Dielectric Relaxation.   IEEE 20th International Symposium on the Physical and Failure Analysis of Integrated Circuits 2013, China (Suzhou).


Zhao, C. Z. & Taylor, S. (2013).  (Keynote) Dielectric relaxation in lanthanide based oxides used for high-k layers.   3rd International Conference on the Advancement of Materials and Nanotechnology, Malaysia (Penang).


Wu, J. J., Zhao, C. Z., Ang, F., & Smith, J. (2013).  Defects Evaluation of Silicon Solar Cells by Using Temperature Dependent Capacitance Spectroscopy.   IEEE 20th International Symposium on the Physical and Failure Analysis of Integrated Circuits 2013, China (Suzhou).


Wang, P., Zhao, C., Zhao, C. Z., & Liu, G. (2012).  Dielectric Relaxation Model in High-k Materials: Simplified Kohlrausch-Williams-Watts Function.   The11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2012), China (Xi'an).


Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Tao, J., and Zhao, C. (2012).  (Invited) Dielectric Relaxation of Lanthanide-based Ternary Oxides.   The11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2012), China (Xi'an).


Zhao, C., Zhang, W., Zhao, C. Z., Man, K. L., Ma, J., T. T. Jeong J. K. Seon (2011).  Standard Cell Library Establishment and Simulation for Scan D Flip-Flops based on 0.5 Micron CMOS Mixed Signal Process.   International SoC Design Conference (ISOCC 2011), Korea (Jeju).


Hu, X., Gui, J., & Zhao, C. Z. (2011).  Ionizing Radiation Testing System for Emerging Semiconductor Materials and Devices.   The 2011 International Conference on Applied Mechanics, China (Shenzhen).


Zhao, C., Pan, W., Zhao, C. Z., Man, K. L., Choi, J., J. Chang (2011).  Performance-Effective Compaction of Standard Cell Library for Edge-triggered Latches Utilizing 0.5 Micron Technology.   International SoC Design Conference (ISOCC 2011), Korea (Jeju).


Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Jones, A. C., Chun Zhao (2010).  (Invited) Effects of lanthanoids doping on dielectric properties of hafnia and zirconia.   Collaborative Conference on Interacting Nanostructures, USA (San Diego).


Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Jones, A. C., Chun Zhao (2010).  Dielectric relaxation of La-doped zirconia caused by annealing ambient.   Collaborative Conference on Interacting Nanostructures, USA (San Diego).


Zhao, C. Z., Werner, M., & Taylor, S. (2009).  High-k dielectrics' radiation response to X-ray and ?-ray exposure.   IEEE 16th International Symposium on the Physical and Failure Analysis of Integrated Circuits, China (Suzhou), p.628-630.


Werner, M., Zhao, C. Z., Taylor, S., Chalker, P. R., Black, K., J. Gaskell (2009).  Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide.   IEEE 16th International Symposium on the Physical and Failure Analysis of Integrated Circuits, China (Suzhou), p.625-627.


Zhang, J. F., Zhao, C. Z., & Chang, M. H. (2008).  (Invited) Positive Charges in Hf-Based Dielectric Stacks.   The 7th International Semiconductor Technology Conference (ISTC2008), China (Shanghai), 76-87.


Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Pham, N., Paul R. Chalker Robert T. Murray Jeffrey M. Gaskell Helen C. Aspinall Anthony C. Jones (2008).  Annealing of Neodymium Aluminates high-k dielectric deposited by Liquid Injection MOCVD using single source Heterometallic Alkoxide precursors.   The 7th International Semiconductor Technology Conference (ISTC2008), China (Shanghai), p.322-326.


Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., J. M. Gaskell A. C. Jones M. Drobnis (2008).  Origin of frequency dispersions in high-k dielectrics.   The 7th International Semiconductor Technology Conference (ISTC2008), China (Shanghai), p.20-26.


Chalker, P. R., Potter, R. J., Werner, M., Jones, A. C., Przybylak, K., Aspinall, H. C., Zhao, C. Z., Taylor, S., and Heys, P. N. (2008).  (Invited) Atomic Layer Deposition of rare earth oxide containing high-k dielectric thin films using cyclopentadienyl-based precursors.   The 8th International Conference on Atomic Layer Deposition (ALD 2008), Belgium (Bruges), p.20.


Zhao, C. Z., Taylor, S., Taechakumput, P., Werner, M., Chalker, P. R., X. L. Huang T. J. Greenshaw J. M. Gaskell A. C. Jones (2008).  High-k materials and their response to X-ray radiation.   The 7th International Semiconductor Technology Conference (ISTC2008), China (Shanghai), p.27-32.


Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., A. C. Jones (2008).  Frequency Dispersion and Dielectric Relaxation of La0.5Hf0.5O2.   The 15th Workshop on Dielectrics in Microelectronics (WODIM 2008), German (Berlin), p.237-238.


Black, K., Jones, A. C., Przybylak, K., Aspinall, H. C., Chalker, P. R., Taylor, S., Zhao, C. Z., and Heys, P. N. (2008).  Deposition of ZrO2 and HfO2 thin films by liquid injection ALD using new ansa-metallocene Zr and Hf organometallic precursors.   The 8th International Conference on Atomic Layer Deposition (ALD 2008), Belgium (Bruges), p.188-207.


Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., J. M. Gaskell A. C. Jones (2008).  High-k materials and their response to gamma ray radiation.   The 15th Workshop on Dielectrics in Microelectronics (WODIM 2008), German (Berlin), p.5-6.


Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., A. C. Jones (2008).  Effect of Annealing Ambient on Dielectric Relaxation of La doped ZrO2.   The 15th Workshop on Dielectrics in Microelectronics (WODIM 2008), German (Berlin), p.235-236.


Zhang, J. F., Zhao, C. Z., Chang, M. H., Zhang, W., Groeseneken, G., L. Pantisano S. De Gendt M. Heyns (2007).  ( Invited) Instability and defects in gate dielectrics: similarity and differences between Hf-stacks and SiO2.   212th Meeting of the Electrochemical Society:Proc of the Physics and Technology of high-k gate dielectrics 5, USA (Washington, D.C.), p.219-233.


Chang, M. H., Wang, Y., Zhang, J. F., Zhao, C. Z., Zhang, W. D., M. Xu (2007).  (Invited) Contribution of As-grown hole traps to NBTI.   211th Meeting of the Electrochemical Society: Ninth International Symposium on thin films, USA (Chicago), p.245-262.


Zhao, C. Z., Zahid, M. B., Zhang, J. F., & Groeseneken, G. (2005).  Properties and Dynamic Behaviour of Electron Traps in HfO2/SiO2 Stacks.   Insulating Films on Semiconductors (INFOS) 14th Biannual Conference, Belgium (Leuven), p.22.


Zhao, C. Z. & Zhang, J. F. (2004).  On the role of hydrogen and holes in positive charge formation in gate oxides.   The 35th IEEE Semiconductor Interface Specialists Conference (SISC 2004), USA (San Diego), p.6.4.


Zhang, J. F. & Zhao, C. Z. (2004).  (Invited) A review of positive charge formation in gate oxide.   7th International Conference on Solid State and Integrated Circuits Technology, China (Beijing), p.781-786.


Zhao, C. Z., Zhang, J. F., Groeseneken, G., & Degraeve, R. (2003).  Different types of positive charges generated near the oxide/Si interface.   The 34th IEEE Semiconductor Interface Specialists Conference (SISC 2003), USA (Arlington), p.4.3.1-4.3.2.


Zhang, W. D., Zhang, J. F., Zhao, C. Z., Groeseneken, G., & Degraeve, R. (2003).  Which defect breaks down gate oxides?   The 34th IEEE Semiconductor Interface Specialists Conference (SISC 2003), USA (Arlington), p.7.3.1-7.3.2.


Zhao, C. Z., Zhang, J. F., Groeseneken, G., & Degraeve, R. (2002).  Generation of hole traps in oxides under high field stresses.   The 33rd IEEE Semiconductor Interface Specialists Conference (SISC 2002), USA (San Diego), p.3.2.1-3.2.2.


Zhang, J. F., Zhao, C. Z., Groeseneken, G., Degraeve, R., Ellis, J. N., C. D. Neech (2001).  Relation between hole traps and non-reactive hydrogen induced positive charges.   Insulating Films on Semiconductors (INFOS) 12th Biannual Conference, Italy (Udine), p.163-164.


Zhang, J. F., Sii, H. K., Chen, A. H., Zhao, C. Z., Uren, M. J., G. Groeseneken R. Degraeve (2001).  The role of hydrogen in hole trap generation in oxides and oxynitrides.   The 32nd IEEE Semiconductor Interface Specialists Conference (SISC 2001), USA (Washington, D.C.), p.2.4.


Zhao, C. Z., Zhang, J. F., Groeseneken, G., Degraeve, R., Ellis, J. N., C. D. Beech (2000).  Reactive and non-reactive hydrogen species in the gate SiO2.   The 31th IEEE Semiconductor Interface Specialists Conference (SISC 2000), USA (San Diego), p.7.7.


Zhao, C. Z., Zhang, J. F., Groeseneken, G., Degraeve, R., Ellis, J. N., C. D. Beech (2000).  Hydrogen Induced and plasma charging enhanced positive charge generation in gate oxides.   The 5th International Symposium on Plasma Process-Induced Damage 2000, USA (Santa Clara), p.129-132.


Gao, Y., Li, G. Z., Liu, E. K., Zhao, C. Z., & Liu, X. D. (1994).  Low Losses SiGe Optical Directional Coupler.   C-MRS and E-MRS on ELECTRONIC and OPTOELECTRONIC MATERIALS, China (Beijing), p.93.


Chapters, Cases, Readings, Supplements 


Fang, Z. & Zhao, C. (2013). Integrated Silicon Photonics Applied for Optical Interconnects. Advances in Science (pp. 133-188). Science Network – Online Open Access Publisher. 


Research Grants

2014: Zhao, C. Total ionizing dose effects in lanthanide doped HfO2 and ultrathin HfO2 gate dielectrics, Principal Investigator, National Natural Science Funding of China (NSFC).


2012: Zhao, C. Total ionizing dose effects in La-based ternary high-k gate dielectrics, Principal Investigator, Jiangsu Science and Technology Programme.


2012: Zhao, C. Radiation hardness of lanthanide doped HfO2 and ultrathin HfO2 gate dielectrics, Principal Investigator, Suzhou Science and Technology Programme.


2010: Zhao, C. Radiation hardness of advanced high-k MOS devices, Principal Investigator, Research Development Fund (RDF).


2010: Zhao, C. Characterization and reliability of HfO2 doped by lanthanide elements, Principal Investigator, Suzhou Science and Technology Programme.


2010: Wu, H. & Zhao, C., High-efficiency photovoltaic technology of CdTe/CdS thin film solar cells, Suzhou Science and Technology Programme.


2009: Zhao, C. Dielectric relaxation and frequency dependence of HfO2 doped by lanthanide elements, Principal Investigator, National Natural Science Funding of China (NSFC).


2009: Wu, H. & Zhao, C., The building of new energy technology service public platform, Suzhou Singapore Industrial Park Programme.


1998: Zhao, C. TIR electro-optical switch based on SOI optical waveguide, Wuhan Institute of Post & Telecommunications Programme.


1997: Zhao, C. Modulating methods and switch array of optical waveguides based on silicon, National Natural Science Funding of China (NSFC).


1996: Zhao, C. Estimation techniques of VLSI failure mechanism, National Defence Science Foundation of China.

1996: Zhao, C. Simulation and estimation of VLSI reliability, National Defence Science Foundation of China.